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NXH015P120M3F1PTG

NXH015P120M3F1PTG onsemi


nxh015p120m3f1-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 77A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 198W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4696pF @ 800V
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 211nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 30mA
auf Bestellung 153 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+114.12 EUR
10+90.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NXH015P120M3F1PTG onsemi

Description: MOSFET 2N-CH 1200V 77A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 198W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4696pF @ 800V, Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 18V, Gate Charge (Qg) (Max) @ Vgs: 211nC @ 18V, Vgs(th) (Max) @ Id: 4.4V @ 30mA.

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NXH015P120M3F1PTG NXH015P120M3F1PTG Hersteller : onsemi NXH015P120M3F1_D-3473577.pdf MOSFET Modules 15M OHM 1200V 40A M3S SIC HALF BRIDGE MODULE
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+118.55 EUR
10+107.45 EUR
28+103.72 EUR
56+100.02 EUR
112+96.32 EUR
252+95.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH