NXH040P120MNF1PTG onsemi

Description: MOSFET 2N-CH 1200V 30A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 74W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V, Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V, Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 10mA.