NXH040P120MNF1PTG onsemi
auf Bestellung 28 Stücke:
Lieferzeit 1228-1232 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 134.15 EUR |
| 10+ | 122.48 EUR |
| 28+ | 116.85 EUR |
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Technische Details NXH040P120MNF1PTG onsemi
Description: SIC 2N-CH 1200V 30A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 74W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V, Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V, Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 10mA.
Weitere Produktangebote NXH040P120MNF1PTG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NXH040P120MNF1PTG | Hersteller : onsemi |
 Description: SIC 2N-CH 1200V 30APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 74W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 10mA |
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