NXH040P120MNF1PTG ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - NXH040P120MNF1PTG - Siliziumkarbid-MOSFET, Halbbrücke, Zweifach n-Kanal, 30 A, 1.2 kV, 0.042 ohm, Modul
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.81V
MOSFET-Modul-Konfiguration: Halbbrücke
Verlustleistung: 74W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: Modul
Anzahl der Pins: 18Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Zweifach n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.042ohm
| Anzahl | Privatkunde |
|---|---|
| 3+ | 118.02 EUR |
| 5+ | 107.42 EUR |
| 10+ | 97.12 EUR |
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Technische Details NXH040P120MNF1PTG ONSEMI
Description: ONSEMI - NXH040P120MNF1PTG - Siliziumkarbid-MOSFET, Halbbrücke, Zweifach n-Kanal, 30 A, 1.2 kV, 0.042 ohm, Modul, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 30A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2.81V, MOSFET-Modul-Konfiguration: Halbbrücke, Verlustleistung: 74W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: Modul, Anzahl der Pins: 18Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Zweifach n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 20V, Drain-Source-Durchgangswiderstand: 0.042ohm.
Weitere Produktangebote NXH040P120MNF1PTG nach Preis ab 101.86 EUR bis 131.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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NXH040P120MNF1PTG | onsemi |
Description: MOSFET 2N-CH 1200V 30A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 74W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 10mA |
auf Bestellung 112 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXH040P120MNF1PTG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Description: MOSFET 2N-CH 1200V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 131.4 EUR |
| 28+ | 101.86 EUR |