NXH100B120H3Q0STG onsemi
Hersteller: onsemiDescription: IGBT MODULE 1200V 50A 186W PIM22
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 87.35 EUR |
| 24+ | 83.18 EUR |
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Technische Details NXH100B120H3Q0STG onsemi
Description: IGBT MODULE 1200V 50A 186W PIM22, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: 22-PIM/Q0BOOST (55x32.5), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 186 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V.
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