NXH300B100H4Q2F2PG onsemi
Hersteller: onsemi
Description: IGBT MOD 1118V 73A 194W 27-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 27-PIM (71x37.4)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 1118 V
Power - Max: 194 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V
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Technische Details NXH300B100H4Q2F2PG onsemi
Description: IGBT MOD 1118V 73A 194W 27-PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: 27-PIM (71x37.4), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 73 A, Voltage - Collector Emitter Breakdown (Max): 1118 V, Power - Max: 194 W, Current - Collector Cutoff (Max): 800 µA, Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NXH300B100H4Q2F2PG | onsemi |
IGBT Modules Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NXH300B100H4Q2F2PG |
|
Hersteller: onsemi
IGBT Modules Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode
IGBT Modules Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen
Stück im Wert von UAH