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NXH50M65L4Q1PTG onsemi

nxh50m65l4q1sg-d.pdf
Hersteller: onsemi
Description: IGBT MODULE 650V 48A 86W 53-PIM
Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V
Current - Collector Cutoff (Max): 300 µA
Power - Max: 86 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 48 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: 53-PIM/Q2PACK (93x47)
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A
Operating Temperature: 175°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details NXH50M65L4Q1PTG onsemi

Description: IGBT MODULE 650V 48A 86W 53-PIM, Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V, Current - Collector Cutoff (Max): 300 µA, Power - Max: 86 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 48 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: 53-PIM/Q2PACK (93x47), NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A, Operating Temperature: 175°C (TJ), Configuration: Full Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.