Produkte > ONSEMI > NXH600B100H4Q2F2S1G
NXH600B100H4Q2F2S1G

NXH600B100H4Q2F2S1G onsemi

nxh600b100h4q2f2s1g-d.pdf Hersteller: onsemi
Description: IGBT MOD 1000V 173A 422W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 173 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 422 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 12687.7 pF @ 20 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+269.09 EUR
10+247.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NXH600B100H4Q2F2S1G onsemi

Description: IGBT MOD 1000V 173A 422W 56-PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: 56-PIM (93x47), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 173 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Power - Max: 422 W, Current - Collector Cutoff (Max): 20 µA, Input Capacitance (Cies) @ Vce: 12687.7 pF @ 20 V.

Weitere Produktangebote NXH600B100H4Q2F2S1G nach Preis ab 286.99 EUR bis 317.15 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NXH600B100H4Q2F2S1G NXH600B100H4Q2F2S1G Hersteller : onsemi NXH600B100H4Q2F2S1G-D.PDF IGBT Modules FLYING CAP 3CHANNEL Q2BOOST WITH IN-HOUSE DIE
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+317.15 EUR
10+286.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH