NXH600N65L4Q2F2SG onsemi
Hersteller: onsemiDescription: 150KW 1100V Q2PACK SOLDER PIN
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: 41-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 483 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 931 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 37.1 nF @ 20 V
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 227.02 EUR |
| 10+ | 199.88 EUR |
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Technische Details NXH600N65L4Q2F2SG onsemi
Description: 150KW 1100V Q2PACK SOLDER PIN, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: 41-PIM/Q2PACK (93x47), IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 483 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 931 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 37.1 nF @ 20 V.
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| NXH600N65L4Q2F2SG | Hersteller : onsemi |
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| NXH600N65L4Q2F2SG | Hersteller : ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC Application: for UPS; Inverter Topology: NTC thermistor; three-level inverter; single-phase Mechanical mounting: screw Gate-emitter voltage: ±20V Max. off-state voltage: 650V Collector current: 600A Technology: SiC Semiconductor structure: diode/transistor Case: PIM41 Type of semiconductor module: IGBT |
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