NXH800H120L7QDSG onsemi
Hersteller: onsemi
Description: 1200V 800A QDUAL3
Input Capacitance (Cies) @ Vce: 94300 pF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 800 A
IGBT Type: Trench Field Stop
Supplier Device Package: 11-PIM (152x62.15)
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 800A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details NXH800H120L7QDSG onsemi
Description: 1200V 800A QDUAL3, Input Capacitance (Cies) @ Vce: 94300 pF @ 25 V, Current - Collector Cutoff (Max): 100 µA, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 800 A, IGBT Type: Trench Field Stop, Supplier Device Package: 11-PIM (152x62.15), NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 800A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote NXH800H120L7QDSG nach Preis ab 331.21 EUR bis 365.87 EUR
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NXH800H120L7QDSG | onsemi |
IGBT Modules 1200V 800A QDUAL3 |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXH800H120L7QDSG |
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Hersteller: onsemi
IGBT Modules 1200V 800A QDUAL3
IGBT Modules 1200V 800A QDUAL3
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 365.87 EUR |
| 10+ | 331.21 EUR |