NXPLQSC20650WQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 20A TO247-3
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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Technische Details NXPLQSC20650WQ WeEn Semiconductors
Description: DIODE SIL CARB 650V 20A TO247-3, Current - Reverse Leakage @ Vr: 230 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-247-3, Current - Average Rectified (Io) (per Diode): 20A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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NXPLQSC20650WQ | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers NXPLQSC20650WQ/TO-247/STANDARD M |
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