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nxplqsc30650w.pdf Hersteller: Ween
NXPLQSC30650WQ/TO-247/STANDARD M
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Technische Details NXPLQSC30650WQ Ween

Description: DIODE SIL CARB 650V 30A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: 175°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A, Current - Reverse Leakage @ Vr: 250 µA @ 650 V.

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NXPLQSC30650WQ Hersteller : WeEn Semiconductors nxplqsc30650w.pdf Description: DIODE SIL CARB 650V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Produkt ist nicht verfügbar
NXPLQSC30650WQ NXPLQSC30650WQ Hersteller : WeEn Semiconductors NXPLQSC30650W-1382416.pdf Schottky Diodes & Rectifiers NXPLQSC30650WQ/TO-247/STANDARD M
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