NXPSC04650X6Q WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A TO220F
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Last Time Buy
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220F
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 4+ | 4.77 EUR |
| 50+ | 2.59 EUR |
| 100+ | 2.36 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.85 EUR |
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Technische Details NXPSC04650X6Q WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A TO220F, Current - Reverse Leakage @ Vr: 170 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Last Time Buy, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220F, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Isolated Tab, Packaging: Tube.
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NXPSC04650X6Q | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers NXPSC04650X6/TO-220F/STANDARD MARKING * HORIZONTAL, RAIL PACK |
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NXPSC04650X6Q | Hersteller : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.7V Max. forward impulse current: 24A Kind of package: tube |
Produkt ist nicht verfügbar |