NXPSC04650X6Q WeEn Semiconductors

Description: DIODE SIL CARBIDE 650V 4A TO220F, Current - Reverse Leakage @ Vr: 170 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Last Time Buy, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220F, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Isolated Tab, Packaging: Tube.