NXPSC10650BJ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Last Time Buy
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details NXPSC10650BJ WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK, Current - Reverse Leakage @ Vr: 250 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Last Time Buy, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: D2PAK, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote NXPSC10650BJ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NXPSC10650BJ | Hersteller : WeEn Semiconductors |
Diodes - General Purpose, Power, Switching NXPSC10650B/D2PAK/STANDARD M |
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