auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 79.83 EUR |
| 11+ | 71.14 EUR |
| 22+ | 66.95 EUR |
| 110+ | 57.41 EUR |
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Technische Details NXV10V160ST1 onsemi
Description: MOSFET 6N-CH 100V APM21-CGA, Packaging: Tube, Package / Case: 21-PowerDIP Module (1.370", 34.80mm), Mounting Type: Through Hole, Configuration: 6 N-Channel, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 50V, Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: APM21-CGA.
Weitere Produktangebote NXV10V160ST1
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NXV10V160ST1 | Hersteller : onsemi |
 Description: MOSFET 6N-CH 100V APM21-CGAPackaging: Tube Package / Case: 21-PowerDIP Module (1.370", 34.80mm) Mounting Type: Through Hole Configuration: 6 N-Channel Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 50V Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: APM21-CGA |
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