NXV65HR82DS2 onsemi
Hersteller: onsemi
MOSFETs Automotive Power Module, H-Bridge in APM16 Series for LLC and Phaseshifted DC-DC
| Anzahl | Preis |
|---|---|
| 1+ | 43.08 EUR |
| 12+ | 38.42 EUR |
| 108+ | 37.65 EUR |
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Technische Details NXV65HR82DS2 onsemi
Description: MOSFET IPM 650V 26A 16-SSIP, Packaging: Tube, Package / Case: 16-SSIP Exposed Pad, Formed Leads, Mounting Type: Through Hole, Type: MOSFET, Configuration: H-Bridge, Voltage - Isolation: 5000Vrms, Grade: Automotive, Current: 26 A, Voltage: 650 V, Qualification: AEC-Q101.
Weitere Produktangebote NXV65HR82DS2 nach Preis ab 36.26 EUR bis 52.87 EUR
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NXV65HR82DS2 | onsemi |
Description: MOSFET IPM 650V 26A 16-SSIP Packaging: Tube Package / Case: 16-SSIP Exposed Pad, Formed Leads Mounting Type: Through Hole Type: MOSFET Configuration: H-Bridge Voltage - Isolation: 5000Vrms Grade: Automotive Current: 26 A Voltage: 650 V Qualification: AEC-Q101 |
auf Bestellung 3280 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXV65HR82DS2 |
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Hersteller: onsemi
Description: MOSFET IPM 650V 26A 16-SSIP
Packaging: Tube
Package / Case: 16-SSIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 5000Vrms
Grade: Automotive
Current: 26 A
Voltage: 650 V
Qualification: AEC-Q101
Description: MOSFET IPM 650V 26A 16-SSIP
Packaging: Tube
Package / Case: 16-SSIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 5000Vrms
Grade: Automotive
Current: 26 A
Voltage: 650 V
Qualification: AEC-Q101
auf Bestellung 3280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 52.87 EUR |
| 10+ | 42.93 EUR |
| 72+ | 38.28 EUR |
| 144+ | 37.17 EUR |
| 288+ | 36.26 EUR |