| Anzahl | Preis |
|---|---|
| 234+ | 0.61 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.44 EUR |
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Technische Details P1000B Diotec Semiconductor
Description: DIODE GEN PURP 100V 10A P600, Packaging: Cut Tape (CT), Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: P-600, Operating Temperature - Junction: -50°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote P1000B nach Preis ab 0.29 EUR bis 1.72 EUR
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P1000B | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10A; Ammo Pack; Ifsm: 400A; P600; 1.5us Mounting: THT Case: P600 Type of diode: rectifying Leakage current: 10µA Reverse recovery time: 1.5µs Max. forward voltage: 1.05V Max. forward impulse current: 0.4kA Max. off-state voltage: 0.1kV Load current: 10A Max. load current: 80A Kind of package: Ammo Pack Semiconductor structure: single diode |
auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
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P1000B | Hersteller : Diotec Semiconductor |
Rectifiers Diode, P600, 100V, 10A |
auf Bestellung 558 Stücke: Lieferzeit 10-14 Tag (e) |
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P1000B | Hersteller : Diotec Semiconductor |
Description: DIODE GEN PURP 100V 10A P600Packaging: Cut Tape (CT) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: P-600 Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
auf Bestellung 276 Stücke: Lieferzeit 10-14 Tag (e) |
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P1000B | Hersteller : Diotec Semiconductor |
Diode 100V 10A 2-Pin Case P-600 Ammo |
Produkt ist nicht verfügbar |
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P1000B | Hersteller : Diotec Semiconductor |
Description: DIODE GEN PURP 100V 10A P600Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: P-600 Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |


