P6SMB33CA-E3/52 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 750+ | 0.15 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
750 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details P6SMB33CA-E3/52 Vishay General Semiconductor - Diodes Division
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; DO214AA,SMB; P6SMB, Mounting: SMD, Case: DO214AA; SMB, Tolerance: ±5%, Manufacturer series: P6SMB, Peak pulse power dissipation: 0.6kW, Technology: TransZorb®, Features of semiconductor devices: glass passivated, Max. off-state voltage: 28.2V, Kind of package: 7 inch reel; tape, Semiconductor structure: bidirectional, Leakage current: 1µA, Type of diode: TVS, Breakdown voltage: 33V, Max. forward impulse current: 13.1A.
Weitere Produktangebote P6SMB33CA-E3/52 nach Preis ab 0.2 EUR bis 1.05 EUR
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P6SMB33CA-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 28.2VWM 45.7V DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13.1A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 2654 Stücke: Lieferzeit 10-14 Tag (e) |
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P6SMB33CA-E3/52 | Vishay |
Diode TVS Single Bi-Dir 28.2V 600W 2-Pin SMB T/R |
auf Bestellung 693 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB33CA-E3/52 | Vishay |
Diode TVS Single Bi-Dir 28.2V 600W 2-Pin SMB T/R |
auf Bestellung 693 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB33CA-E3/52 | Vishay Semiconductors |
ESD Protection Diodes / TVS Diodes 600W 33V Bidirect |
auf Bestellung 20767 Stücke: Lieferzeit 10-14 Tag (e) |
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P6SMB33CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; DO214AA,SMB; P6SMB Mounting: SMD Case: DO214AA; SMB Tolerance: ±5% Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 28.2V Kind of package: 7 inch reel; tape Semiconductor structure: bidirectional Leakage current: 1µA Type of diode: TVS Breakdown voltage: 33V Max. forward impulse current: 13.1A |
auf Bestellung 1440 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| P6SMB33CA-E3/52 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 2654 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 63+ | 0.33 EUR |
| 71+ | 0.3 EUR |
| 103+ | 0.2 EUR |
| P6SMB33CA-E3/52 |
|
Hersteller: Vishay
Diode TVS Single Bi-Dir 28.2V 600W 2-Pin SMB T/R
Diode TVS Single Bi-Dir 28.2V 600W 2-Pin SMB T/R
auf Bestellung 693 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 498+ | 0.35 EUR |
| P6SMB33CA-E3/52 |
|
Hersteller: Vishay
Diode TVS Single Bi-Dir 28.2V 600W 2-Pin SMB T/R
Diode TVS Single Bi-Dir 28.2V 600W 2-Pin SMB T/R
auf Bestellung 693 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 214+ | 0.81 EUR |
| 335+ | 0.5 EUR |
| 361+ | 0.45 EUR |
| 498+ | 0.3 EUR |
| P6SMB33CA-E3/52 |
|
Hersteller: Vishay Semiconductors
ESD Protection Diodes / TVS Diodes 600W 33V Bidirect
ESD Protection Diodes / TVS Diodes 600W 33V Bidirect
auf Bestellung 20767 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.05 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.27 EUR |
| 750+ | 0.25 EUR |
| 24750+ | 0.24 EUR |
| P6SMB33CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Mounting: SMD
Case: DO214AA; SMB
Tolerance: ±5%
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 28.2V
Kind of package: 7 inch reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Mounting: SMD
Case: DO214AA; SMB
Tolerance: ±5%
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 28.2V
Kind of package: 7 inch reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)