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P6SMB36CA-AU_R1_000A1 PanJit Semiconductor


P6SMB-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Manufacturer series: P6SMB
Max. off-state voltage: 30.8V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SMB
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Application: automotive industry
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
112+0.76 EUR
178+0.48 EUR
183+0.46 EUR
Mindestbestellmenge: 112 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details P6SMB36CA-AU_R1_000A1 PanJit Semiconductor

Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape, Manufacturer series: P6SMB, Max. off-state voltage: 30.8V, Kind of package: reel; tape, Semiconductor structure: bidirectional, Leakage current: 1µA, Case: SMB, Type of diode: TVS, Mounting: SMD, Breakdown voltage: 34.2...37.8V, Max. forward impulse current: 12A, Peak pulse power dissipation: 0.6kW, Features of semiconductor devices: glass passivated, Application: automotive industry.

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