Technische Details P6SMBJ11CA_R2_00001 Panjit
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 33A; bidirectional; SMB; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 11V, Breakdown voltage: 12.2...13.5V, Max. forward impulse current: 33A, Semiconductor structure: bidirectional, Case: SMB, Mounting: SMD, Leakage current: 1µA, Manufacturer series: P6SMBJ, Features of semiconductor devices: glass passivated, Kind of package: reel; tape.
Weitere Produktangebote P6SMBJ11CA_R2_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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P6SMBJ11CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 33A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 33A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| P6SMBJ11CA_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 33A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 33A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH