Technische Details P85GC28HP2F-5100 Shindengen Electric Manufacturing Co.
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W, Type of transistor: N-MOSFET, Case: GC (TO247AD); TO247AD, Mounting: THT, On-state resistance: 45mΩ, Gate-source voltage: ±10V, Drain current: 85A, Power dissipation: 430W, Drain-source voltage: 280V, Gate charge: 110nC, Kind of channel: enhancement, Polarisation: unipolar.
Weitere Produktangebote P85GC28HP2F-5100
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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P85GC28HP2F-5100 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W Type of transistor: N-MOSFET Case: GC (TO247AD); TO247AD Mounting: THT On-state resistance: 45mΩ Gate-source voltage: ±10V Drain current: 85A Power dissipation: 430W Drain-source voltage: 280V Gate charge: 110nC Kind of channel: enhancement Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| P85GC28HP2F-5100 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W
Type of transistor: N-MOSFET
Case: GC (TO247AD); TO247AD
Mounting: THT
On-state resistance: 45mΩ
Gate-source voltage: ±10V
Drain current: 85A
Power dissipation: 430W
Drain-source voltage: 280V
Gate charge: 110nC
Kind of channel: enhancement
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W
Type of transistor: N-MOSFET
Case: GC (TO247AD); TO247AD
Mounting: THT
On-state resistance: 45mΩ
Gate-source voltage: ±10V
Drain current: 85A
Power dissipation: 430W
Drain-source voltage: 280V
Gate charge: 110nC
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH