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PBHV2160Z-QX

PBHV2160Z-QX Nexperia USA Inc.

PBHV2160Z-Q.pdf Hersteller: Nexperia USA Inc.
Description: PBHV2160Z-Q/SOT223/SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 6mA, 30mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 650 mW
Qualification: AEC-Q101
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
20+0.90 EUR
100+0.59 EUR
500+0.45 EUR
Mindestbestellmenge: 13
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Technische Details PBHV2160Z-QX Nexperia USA Inc.

Description: PBHV2160Z-Q/SOT223/SC-73, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 125mV @ 6mA, 30mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V, Supplier Device Package: SOT-223, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 650 mW, Qualification: AEC-Q101.

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PBHV2160Z-QX PBHV2160Z-QX Hersteller : Nexperia USA Inc. PBHV2160Z-Q.pdf Description: PBHV2160Z-Q/SOT223/SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 6mA, 30mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 650 mW
Qualification: AEC-Q101
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PBHV2160Z-QX PBHV2160Z-QX Hersteller : Nexperia PBHV2160Z-Q.pdf Bipolar Transistors - BJT SOT223 60V .1A NPN BISS TRANS
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