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PBHV8110DH_R1_00001

PBHV8110DH_R1_00001 Panjit International Inc.

PBHV8110DA.pdf Hersteller: Panjit International Inc.
Description: TRANS NPN 100V 1A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
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Technische Details PBHV8110DH_R1_00001 Panjit International Inc.

Description: TRANS NPN 100V 1A SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-89, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.4 W.

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PBHV8110DH_R1_00001 PBHV8110DH_R1_00001 Hersteller : Panjit International Inc. PBHV8110DA.pdf Description: TRANS NPN 100V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
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PBHV8110DH_R1_00001 PBHV8110DH_R1_00001 Hersteller : Panjit PBHV8110DH-1876738.pdf Bipolar Transistors - BJT NPN Low Vce(sat) Transistor
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