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PBHV8115Z,115

PBHV8115Z,115 Nexperia

PBHV8115Z.pdf
Hersteller: Nexperia
Bipolar Transistors - BJT SOT223 150V NPN HIVOLT VCE BJT
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.14 EUR
10+0.72 EUR
100+0.48 EUR
500+0.38 EUR
1000+0.33 EUR
2000+0.3 EUR
5000+0.26 EUR
Mindestbestellmenge: 3 Stücke
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Technische Details PBHV8115Z,115 Nexperia

Description: TRANS NPN 150V 1A SOT-223, Qualification: AEC-Q100, Grade: Automotive, Power - Max: 1.4 W, Voltage - Collector Emitter Breakdown (Max): 150 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: SOT-223, Frequency - Transition: 30MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).

Weitere Produktangebote PBHV8115Z,115 nach Preis ab 0.43 EUR bis 1.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PBHV8115Z,115 PBHV8115Z,115 Nexperia USA Inc. PBHV8115Z.pdf Description: TRANS NPN 150V 1A SOT-223
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 1017 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
21+0.87 EUR
100+0.56 EUR
500+0.43 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PBHV8115Z,115 NXP/Nexperia/We-En PBHV8115Z.pdf Транзистор NPN, Ptot, Вт = 1,4, Uceo, В = 150, Ic = 1 А, Тип монт. = smd, ft, МГц = 30, hFE = 50 @ 500 мA, 10 В, Icutoff-max = 100 нА, Uceo(sat), В @ Ic, Ib = 0,35 @ 200 мА, 1 А, Тексп, °С = -55...+150,... Транзистори Корпус: SOT-323 Очікується: 10 Од. ви
Anzahl je Verpackung: 1000 Stücke
verfügbar 314 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
PBHV8115Z,115 PBHV8115Z.pdf
PBHV8115Z,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 150V 1A SOT-223
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 1017 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.39 EUR
21+0.87 EUR
100+0.56 EUR
500+0.43 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PBHV8115Z,115 PBHV8115Z.pdf
Hersteller: NXP/Nexperia/We-En
Транзистор NPN, Ptot, Вт = 1,4, Uceo, В = 150, Ic = 1 А, Тип монт. = smd, ft, МГц = 30, hFE = 50 @ 500 мA, 10 В, Icutoff-max = 100 нА, Uceo(sat), В @ Ic, Ib = 0,35 @ 200 мА, 1 А, Тексп, °С = -55...+150,... Транзистори Корпус: SOT-323 Очікується: 10 Од. ви
Anzahl je Verpackung: 1000 Stücke
verfügbar 314 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH