Technische Details PBHV8140Z-QX NEXPERIA
Description: PBHV8140Z-Q/SOT223/SC-73, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Frequency - Transition: 25MHz, Supplier Device Package: SOT-223, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 730 mW, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PBHV8140Z-QX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PBHV8140Z-QX | Hersteller : NEXPERIA |
 PBHV8140Z-QX NPN SMD transistors |
Produkt ist nicht verfügbar |
||
 |
PBHV8140Z-QX | Hersteller : Nexperia USA Inc. |
Description: PBHV8140Z-Q/SOT223/SC-73 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 25MHz Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 730 mW Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
 |
PBHV8140Z-QX | Hersteller : Nexperia |
Bipolar Transistors - BJT PBHV8140Z-Q/SOT223/SC-73 |
Produkt ist nicht verfügbar |