PBHV9050T-QR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 500V 0.15A TO-236AB
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Technische Details PBHV9050T-QR Nexperia USA Inc.
Description: TRANS PNP 500V 0.15A TO-236AB, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 500 V, Current - Collector (Ic) (Max): 150 mA, Part Status: Active, Supplier Device Package: TO-236AB, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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PBHV9050T-QR | Hersteller : Nexperia |
Bipolar Transistors - BJT SOT23 500V .15A PNP HI V BISS |
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