auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.79 EUR |
| 10+ | 0.52 EUR |
| 100+ | 0.34 EUR |
| 3000+ | 0.16 EUR |
| 9000+ | 0.13 EUR |
| 24000+ | 0.12 EUR |
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Technische Details PBLS2002D,115 Nexperia
Description: TRANS PREBIAS 1NPN 1PNP 6-TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 600mW, Current - Collector (Ic) (Max): 100mA, 1A, Voltage - Collector Emitter Breakdown (Max): 50V, 20V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A, Current - Collector Cutoff (Max): 1µA, 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 220 @ 500mA, 2V, Frequency - Transition: 185MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: 6-TSOP, Part Status: Active.
Weitere Produktangebote PBLS2002D,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PBLS2002D,115 | Hersteller : NEXPERIA |
 Trans Digital BJT NPN/PNP 50V 100mA/1A 600mW Automotive 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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PBLS2002D,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 6-TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 600mW Current - Collector (Ic) (Max): 100mA, 1A Voltage - Collector Emitter Breakdown (Max): 50V, 20V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA, 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 220 @ 500mA, 2V Frequency - Transition: 185MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: 6-TSOP Part Status: Active |
Produkt ist nicht verfügbar |
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PBLS2002D,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 6-TSOP Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 600mW Current - Collector (Ic) (Max): 100mA, 1A Voltage - Collector Emitter Breakdown (Max): 50V, 20V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA, 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 220 @ 500mA, 2V Frequency - Transition: 185MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |