PBLS2002S,115 NXP USA Inc.
Hersteller: NXP USA Inc.Description: TRANS NPN PREBIAS/PNP 1.5W 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 1.5W
Current - Collector (Ic) (Max): 100mA, 3A
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
Current - Collector Cutoff (Max): 1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V
Frequency - Transition: 100MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: 8-SO
auf Bestellung 3258 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3258+ | 0.18 EUR |
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Technische Details PBLS2002S,115 NXP USA Inc.
Description: TRANS NPN PREBIAS/PNP 1.5W 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 1.5W, Current - Collector (Ic) (Max): 100mA, 3A, Voltage - Collector Emitter Breakdown (Max): 50V, 20V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A, Current - Collector Cutoff (Max): 1µA, 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V, Frequency - Transition: 100MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: 8-SO, Part Status: Obsolete.
Weitere Produktangebote PBLS2002S,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PBLS2002S,115 | Hersteller : NXP |
Description: NXP - PBLS2002S,115 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 3258 Stücke: Lieferzeit 14-21 Tag (e) |
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PBLS2002S,115 | Hersteller : NXP USA Inc. |
Description: TRANS NPN PREBIAS/PNP 1.5W 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 1.5W Current - Collector (Ic) (Max): 100mA, 3A Voltage - Collector Emitter Breakdown (Max): 50V, 20V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A Current - Collector Cutoff (Max): 1µA, 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V Frequency - Transition: 100MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |