PBRP123YT-QR NEXPERIA
Hersteller: NEXPERIACategory: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.073 EUR |
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Technische Details PBRP123YT-QR NEXPERIA
Description: TRANS PREBIAS PNP 40V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 750mV @ 6mA, 600mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 300mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 250 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Grade: Automotive, Qualification: AEC-Q101.
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PBRP123YT-QR | Hersteller : Nexperia |
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PBRP123YT-QR | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 40V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 750mV @ 6mA, 600mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 300mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
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PBRP123YT-QR | Hersteller : Nexperia |
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