PBSS302ND-QH Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PBSS302ND-Q/SOT457/SC-74
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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Technische Details PBSS302ND-QH Nexperia USA Inc.
Description: PBSS302ND-Q/SOT457/SC-74, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 4 A, Part Status: Active, Supplier Device Package: 6-TSOP, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).
Weitere Produktangebote PBSS302ND-QH
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PBSS302ND-QH | Hersteller : Nexperia |
Bipolar Transistors - BJT 40 V, 4 A NPN low VCEsat transistor |
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