PBSS302ND-QX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PBSS302ND-Q/SOT457/SC-74
Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Produktrezensionen
Produktbewertung abgeben
Technische Details PBSS302ND-QX Nexperia USA Inc.
Description: PBSS302ND-Q/SOT457/SC-74, Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR), Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 4 A, Part Status: Active, Supplier Device Package: 6-TSOP, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V, Current - Collector Cutoff (Max): 100nA.
Weitere Produktangebote PBSS302ND-QX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
PBSS302ND-QX | Hersteller : Nexperia |
Bipolar Transistors - BJT 40 V, 4 A NPN low VCEsat transistor |
Produkt ist nicht verfügbar |
