auf Bestellung 1612 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 662+ | 0.83 EUR |
Produktrezensionen
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Technische Details PBSS4032SP,115 Nexperia
Description: TRANS 2PNP DUAL 30V 4.8A 8-SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 2.3W, Current - Collector (Ic) (Max): 4.8A, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 510mV @ 250mA, 5A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V, Frequency - Transition: 115MHz, Supplier Device Package: 8-SO.
Weitere Produktangebote PBSS4032SP,115 nach Preis ab 0.83 EUR bis 0.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
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PBSS4032SP,115 | Hersteller : Nexperia |
Trans GP BJT PNP 30V 4.8A 2300mW 8-Pin SO T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS4032SP,115 | Hersteller : Nexperia |
Bipolar Transistors - BJT Dual PNP -30V -4.8A 0.73W 115MHz |
auf Bestellung 1624 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS4032SP,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS 2PNP DUAL 30V 4.8A 8-SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2.3W Current - Collector (Ic) (Max): 4.8A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 510mV @ 250mA, 5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 115MHz Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
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PBSS4032SP,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS 2PNP DUAL 30V 4.8A 8-SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2.3W Current - Collector (Ic) (Max): 4.8A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 510mV @ 250mA, 5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 115MHz Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |


