PBSS4032SPN,115 Nexperia
| Anzahl | Privatkunde |
|---|---|
| 298+ | 2.23 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.77 EUR |
| 10000+ | 1.55 EUR |
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Technische Details PBSS4032SPN,115 Nexperia
Description: TRANS NPN/PNP 30V 5.7A/4.8A 8-SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: 150°C (TJ), Power - Max: 2.3W, Current - Collector (Ic) (Max): 5.7A, 4.8A, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V, Frequency - Transition: 140MHz, 115MHz, Supplier Device Package: 8-SO.
Weitere Produktangebote PBSS4032SPN,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| PBSS4032SPN,115 | NXP |
8-SOIC Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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PBSS4032SPN,115 | Nexperia USA Inc. |
Description: TRANS NPN/PNP 30V 5.7A/4.8A 8-SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 2.3W Current - Collector (Ic) (Max): 5.7A, 4.8A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V Frequency - Transition: 140MHz, 115MHz Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
PBSS4032SPN,115 | Nexperia |
Bipolar Transistors - BJT Dual +/-30V '+5.7A -5.7A 0.73W 140MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PBSS4032SPN,115 |
![]() |
Hersteller: NXP
8-SOIC Транзистори
8-SOIC Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PBSS4032SPN,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS NPN/PNP 30V 5.7A/4.8A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 5.7A, 4.8A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V
Frequency - Transition: 140MHz, 115MHz
Supplier Device Package: 8-SO
Description: TRANS NPN/PNP 30V 5.7A/4.8A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 5.7A, 4.8A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V
Frequency - Transition: 140MHz, 115MHz
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PBSS4032SPN,115 |
![]() |
Hersteller: Nexperia
Bipolar Transistors - BJT Dual +/-30V '+5.7A -5.7A 0.73W 140MHz
Bipolar Transistors - BJT Dual +/-30V '+5.7A -5.7A 0.73W 140MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH




