PBSS4112PAN-QX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PBSS4112PAN-Q/SOT1118/HUSON6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
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Technische Details PBSS4112PAN-QX Nexperia USA Inc.
Description: PBSS4112PAN-Q/SOT1118/HUSON6, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN, Operating Temperature: 150°C (TJ), Power - Max: 510mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 100mA, 2V, Frequency - Transition: 120MHz, Supplier Device Package: 6-HUSON (2x2), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PBSS4112PAN-QX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PBSS4112PAN-QX | Hersteller : Nexperia |
Bipolar Transistors - BJT 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor |
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