PBSS4160DS-QH Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PBSS4160DS-Q/SOT457/SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 420mW
Current - Collector (Ic) (Max): 870mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: 6-TSOP
Description: PBSS4160DS-Q/SOT457/SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 420mW
Current - Collector (Ic) (Max): 870mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: 6-TSOP
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Technische Details PBSS4160DS-QH Nexperia USA Inc.
Description: PBSS4160DS-Q/SOT457/SC-74, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 420mW, Current - Collector (Ic) (Max): 870mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V, Frequency - Transition: 220MHz, Supplier Device Package: 6-TSOP.
Weitere Produktangebote PBSS4160DS-QH
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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PBSS4160DS-QH | Hersteller : Nexperia |
 Bipolar Transistors - BJT PBSS4160DS-Q/SOT457/SC-74 |
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