
PBSS4160PANPS115 NXP USA Inc.

Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V
Frequency - Transition: 175MHz, 125MHz
Supplier Device Package: DFN2020D-6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2112+ | 0.22 EUR |
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Technische Details PBSS4160PANPS115 NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, PNP, Operating Temperature: 150°C (TJ), Power - Max: 370mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V, Frequency - Transition: 175MHz, 125MHz, Supplier Device Package: DFN2020D-6, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PBSS4160PANPS115
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
PBSS4160PANPS115 | Hersteller : NXP |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |