PBSS4160PANPSX Nexperia
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
Produktrezensionen
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Technische Details PBSS4160PANPSX Nexperia
Description: TRANS NPN/PNP 60V 1A DFN2020D-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: 150°C (TJ), Power - Max: 370mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA / 340mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V, Frequency - Transition: 175MHz, 125MHz, Supplier Device Package: DFN2020D-6, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PBSS4160PANPSX nach Preis ab 0.21 EUR bis 1.24 EUR
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PBSS4160PANPSX | Hersteller : Nexperia |
 Trans GP BJT NPN/PNP 60V 1A 2000mW Automotive 6-Pin DFN-D EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS4160PANPSX | Hersteller : Nexperia |
Trans GP BJT NPN/PNP 60V 1A 2000mW Automotive 6-Pin DFN-D EP T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS4160PANPSX | Hersteller : Nexperia USA Inc. |
Description: TRANS NPN/PNP 60V 1A DFN2020D-6 Packaging: Bulk Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 370mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA / 340mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V Frequency - Transition: 175MHz, 125MHz Supplier Device Package: DFN2020D-6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 51443 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS4160PANPSX | Hersteller : Nexperia |
Bipolar Transistors - BJT 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor |
auf Bestellung 1142 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBSS4160PANPSX | Hersteller : NXP Semiconductors |
Trans GP BJT NPN/PNP 60V 1A 2000mW 6-Pin DFN-D EP T/R Automotive AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS4160PANPSX | Hersteller : NXP Semiconductors |
Trans GP BJT NPN/PNP 60V 1A 2000mW 6-Pin DFN-D EP T/R Automotive AEC-Q101 |
auf Bestellung 18443 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS4160PANPSX | Hersteller : NEXPERIA |
Description: NEXPERIA - PBSS4160PANPSX - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS4160PANPSX | Hersteller : NXP |
Description: NXP - PBSS4160PANPSX - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS4160PANPSX | Hersteller : NEXPERIA |
Trans GP BJT NPN/PNP 60V 1A 2000mW Automotive 6-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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PBSS4160PANPSX | Hersteller : Nexperia USA Inc. |
Description: TRANS NPN/PNP 60V 1A DFN2020D-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 370mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA / 340mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V Frequency - Transition: 175MHz, 125MHz Supplier Device Package: DFN2020D-6 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PBSS4160PANPSX | Hersteller : Nexperia USA Inc. |
Description: TRANS NPN/PNP 60V 1A DFN2020D-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 370mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA / 340mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V Frequency - Transition: 175MHz, 125MHz Supplier Device Package: DFN2020D-6 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |