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PBSS4160T-QVL

PBSS4160T-QVL Nexperia

PBSS4160T-Q.pdf
Hersteller: Nexperia
Bipolar Transistors - BJT SOT23 60V 1A NPN BISS TRAN
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Technische Details PBSS4160T-QVL Nexperia

Description: PBSS4160T-Q/SOT23/TO-236AB, Qualification: AEC-Q101, Grade: Automotive, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Power - Max: 270 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 900 mA, Part Status: Active, Supplier Device Package: TO-236AB, Frequency - Transition: 220MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V.

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PBSS4160T-QVL PBSS4160T-QVL Hersteller : Nexperia USA Inc. PBSS4160T-Q.pdf Description: PBSS4160T-Q/SOT23/TO-236AB
Qualification: AEC-Q101
Grade: Automotive
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 270 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 900 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
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