PBSS4260PANS-QX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PBSS4260PANS-Q/SOT1118/HUSON6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020D-6
Grade: Automotive
Qualification: AEC-Q101
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Technische Details PBSS4260PANS-QX Nexperia USA Inc.
Description: PBSS4260PANS-Q/SOT1118/HUSON6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 510mW, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V, Frequency - Transition: 140MHz, Supplier Device Package: DFN2020D-6, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PBSS4260PANS-QX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PBSS4260PANS-QX | Hersteller : Nexperia | Bipolar Transistors - BJT SOT1118 60V 2A NPN/NPN BJT |
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