auf Bestellung 2297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.76 EUR |
| 10+ | 0.55 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.2 EUR |
| 2500+ | 0.17 EUR |
| 5000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PBSS4260QAZ Nexperia
Description: TRANS NPN 60V 2A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V, Frequency - Transition: 180MHz, Supplier Device Package: DFN1010D-3, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 325 mW, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote PBSS4260QAZ nach Preis ab 0.18 EUR bis 0.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PBSS4260QAZ | Hersteller : Nexperia USA Inc. |
 Description: TRANS NPN 60V 2A DFN1010D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN1010D-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 325 mW Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBSS4260QAZ | Hersteller : NXP Semiconductors |
Trans GP BJT NPN 60V 2A 1000mW Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS4260QAZ | Hersteller : NXP Semiconductors |
Trans GP BJT NPN 60V 2A 1000mW Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 140000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS4260QAZ | Hersteller : NXP Semiconductors |
Trans GP BJT NPN 60V 2A 1000mW Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS4260QAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - PBSS4260QAZ - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 85000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS4260QAZ | Hersteller : Nexperia |
Trans GP BJT NPN 60V 2A 1000mW Automotive AEC-Q101 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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PBSS4260QAZ | Hersteller : NEXPERIA |
Trans GP BJT NPN 60V 2A 1000mW Automotive 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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PBSS4260QAZ | Hersteller : Nexperia USA Inc. |
Description: TRANS NPN 60V 2A DFN1010D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN1010D-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 325 mW Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |