PBSS4350Z-QF Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PBSS4350Z-Q/SOT223/SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.35 W
Qualification: AEC-Q101
Description: PBSS4350Z-Q/SOT223/SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.35 W
Qualification: AEC-Q101
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Technische Details PBSS4350Z-QF Nexperia USA Inc.
Description: PBSS4350Z-Q/SOT223/SC-73, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-223, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.35 W, Qualification: AEC-Q101.
Weitere Produktangebote PBSS4350Z-QF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PBSS4350Z-QF | Hersteller : Nexperia |
 Bipolar Transistors - BJT PBSS4350Z-Q/SOT223/SC-73 |
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