PBSS5140T-QR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
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Technische Details PBSS5140T-QR Nexperia USA Inc.
Description: TRANS PNP 40V 1A TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 300 mW.
Weitere Produktangebote PBSS5140T-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PBSS5140T-QR | Hersteller : Nexperia | Bipolar Transistors - BJT SOT23 40V 1A PNP BJT |
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