PBSS5240T-QR Nexperia
Hersteller: Nexperia
Bipolar Transistors - BJT The factory is currently not accepting orders for this product.
| Anzahl | Preis |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.2 EUR |
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Technische Details PBSS5240T-QR Nexperia
Description: TRANS PNP 40V 2A TO-236AB, Qualification: AEC-Q101, Grade: Automotive, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: TO-236AB, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PBSS5240T-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PBSS5240T-QR | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 40V 2A TO-236AB Qualification: AEC-Q101 Grade: Automotive Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TO-236AB Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
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