Produkte > NEXPERIA > PBSS5240V,115
PBSS5240V,115

PBSS5240V,115 Nexperia

PBSS5240V.pdf
Hersteller: Nexperia
Bipolar Transistors - BJT PBSS5240V/SOT666/SOT6
auf Bestellung 737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.94 EUR
10+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.2 EUR
2000+0.18 EUR
4000+0.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PBSS5240V,115 Nexperia

Description: TRANS PNP 40V 1.8A SOT-666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: SOT-666, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 1.8 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 900 mW.

Weitere Produktangebote PBSS5240V,115

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PBSS5240V,115 PBSS5240V,115 Nexperia USA Inc. PBSS5240V.pdf Description: TRANS PNP 40V 1.8A SOT-666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1.8 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS5240V,115 PBSS5240V,115 Nexperia USA Inc. PBSS5240V.pdf Description: TRANS PNP 40V 1.8A SOT-666
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.8 A
Part Status: Not For New Designs
Supplier Device Package: SOT-666
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS5240V,115 PBSS5240V.pdf
PBSS5240V,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 1.8A SOT-666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1.8 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS5240V,115 PBSS5240V.pdf
PBSS5240V,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 1.8A SOT-666
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.8 A
Part Status: Not For New Designs
Supplier Device Package: SOT-666
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH