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PBSS5255PAPS-QX

PBSS5255PAPS-QX Nexperia


PBSS5255PAPS-Q.pdf Hersteller: Nexperia
Bipolar Transistors - BJT PBSS5255PAPS-Q/SOT1118/HUSON6
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Technische Details PBSS5255PAPS-QX Nexperia

Description: TRANS 2PNP 55V 2A DFN2020D-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 370mW, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 55V, Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: DFN2020D-6, Grade: Automotive, Qualification: AEC-Q101.

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PBSS5255PAPS-QX PBSS5255PAPS-QX Hersteller : Nexperia USA Inc. PBSS5255PAPS-Q.pdf Description: TRANS 2PNP 55V 2A DFN2020D-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 55V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DFN2020D-6
Grade: Automotive
Qualification: AEC-Q101
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