auf Bestellung 1474 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.94 EUR |
| 10+ | 0.58 EUR |
| 50+ | 0.42 EUR |
| 100+ | 0.37 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.19 EUR |
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Technische Details PBSS5320T-QR Nexperia
Description: TRANS PNP 20V 2A TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 300 mW, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PBSS5320T-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PBSS5320T-QR | Hersteller : NEXPERIA |
 Trans GP BJT PNP 20V 2A 1200mW 3-Pin SOT-23 |
Produkt ist nicht verfügbar |
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PBSS5320T-QR | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 20V 2A TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |