Produkte > NEXPERIA > PBSS5320T-QR
PBSS5320T-QR

PBSS5320T-QR Nexperia

PBSS5320T-Q.pdf
Hersteller: Nexperia
Bipolar Transistors - BJT SOT23 20V 3A PNP BJT
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.2 EUR
10+0.83 EUR
100+0.52 EUR
500+0.32 EUR
1000+0.24 EUR
3000+0.21 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PBSS5320T-QR Nexperia

Description: TRANS PNP 20V 2A TO-236AB, Grade: Automotive, Qualification: AEC-Q101, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: TO-236AB, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote PBSS5320T-QR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PBSS5320T-QR PBSS5320T-QR Hersteller : Nexperia USA Inc. PBSS5320T-Q.pdf Description: TRANS PNP 20V 2A TO-236AB
Grade: Automotive
Qualification: AEC-Q101
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH