PBSS5350SS,115 NXP USA Inc.
auf Bestellung 1790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1790+ | 0.28 EUR |
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Technische Details PBSS5350SS,115 NXP USA Inc.
Description: TRANS 2PNP 50V 2.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 750mW, Current - Collector (Ic) (Max): 2.7A, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 370mV @ 270mA, 2.7A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V, Supplier Device Package: 8-SO, Part Status: Obsolete.
Weitere Produktangebote PBSS5350SS,115 nach Preis ab 0.39 EUR bis 0.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PBSS5350SS,115 | Hersteller : Nexperia |
 Trans GP BJT PNP 50V 2.7A 2000mW Automotive AEC-Q101 8-Pin SO T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5350SS,115 | Hersteller : NEXPERIA |
Trans GP BJT NPN/PNP 50V 2.7A Automotive 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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PBSS5350SS,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS 2PNP 50V 2.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 750mW Current - Collector (Ic) (Max): 2.7A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 370mV @ 270mA, 2.7A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
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PBSS5350SS,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS 2PNP 50V 2.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 750mW Current - Collector (Ic) (Max): 2.7A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 370mV @ 270mA, 2.7A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
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PBSS5350SS,115 | Hersteller : Nexperia |
Bipolar Transistors - BJT TRANS BISS TAPE-7 |
Produkt ist nicht verfügbar |