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PBSS5620PA,115

PBSS5620PA,115 Nexperia USA Inc.

PBSS5620PA.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 20V 6A 3HUSON
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Cut Tape (CT)
Power - Max: 2.1 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
auf Bestellung 2770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.83 EUR
50+0.61 EUR
100+0.53 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PBSS5620PA,115 Nexperia USA Inc.

Description: TRANS PNP 20V 6A 3HUSON, Power - Max: 2.1 W, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 6 A, Part Status: Active, Supplier Device Package: 3-HUSON (2x2), Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-PowerUDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote PBSS5620PA,115 nach Preis ab 0.35 EUR bis 1.99 EUR

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PBSS5620PA,115 PBSS5620PA,115 Hersteller : Nexperia PBSS5620PA.pdf Bipolar Transistors - BJT PBSS5620PA/SOT1061/HUSON3
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.99 EUR
10+1.37 EUR
100+0.87 EUR
500+0.54 EUR
1000+0.39 EUR
3000+0.35 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PBSS5620PA,115 PBSS5620PA,115 Hersteller : Nexperia USA Inc. PBSS5620PA.pdf Description: TRANS PNP 20V 6A 3HUSON
Power - Max: 2.1 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2770 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH