PCDD0465GB_L2_00601 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 17A
Power dissipation: 51W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 320A
Max. forward voltage: 1.4V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 17A
Power dissipation: 51W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 320A
Max. forward voltage: 1.4V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
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Technische Details PCDD0465GB_L2_00601 PanJit Semiconductor
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 4A, Max. load current: 17A, Power dissipation: 51W, Semiconductor structure: single diode, Case: TO252AA, Kind of package: reel; tape, Max. forward impulse current: 320A, Max. forward voltage: 1.4V, Leakage current: 0.1mA, Anzahl je Verpackung: 1 Stücke.
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Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 17A Power dissipation: 51W Semiconductor structure: single diode Case: TO252AA Kind of package: reel; tape Max. forward impulse current: 320A Max. forward voltage: 1.4V Leakage current: 0.1mA |
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