PCDF0865G1_T0_00601 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 78.1W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 28A
Power dissipation: 78.1W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.8V
Leakage current: 60µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details PCDF0865G1_T0_00601 PanJit Semiconductor
Description: 650V/8A THROUGH HOLE SILICON CAR, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote PCDF0865G1_T0_00601
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
PCDF0865G1_T0_00601 | Hersteller : Panjit International Inc. |
Description: 650V/8A THROUGH HOLE SILICON CAR Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
Produkt ist nicht verfügbar |
|
 |
PCDF0865G1_T0_00601 | Hersteller : Panjit |
Schottky Diodes & Rectifiers 650V/8A Through Hole Silicon Carbide Schottky Barrier Diode |
Produkt ist nicht verfügbar |
|
| PCDF0865G1_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 78.1W; ITO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Max. load current: 28A Power dissipation: 78.1W Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. forward impulse current: 0.48kA Max. forward voltage: 1.8V Leakage current: 60µA |
Produkt ist nicht verfügbar |