PCDF0865G1_T0_00601 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 650V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.98 EUR |
| 10+ | 8.01 EUR |
| 50+ | 6.32 EUR |
| 100+ | 5.77 EUR |
| 500+ | 4.82 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details PCDF0865G1_T0_00601 Panjit International Inc.
Description: DIODE SIL CARB 650V 8A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote PCDF0865G1_T0_00601
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PCDF0865G1_T0_00601 | Panjit |
SiC Schottky Diodes 650V/8A Through Hole Silicon Carbide Schottky Barrier Diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PCDF0865G1_T0_00601 | PanJit |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Max. off-state voltage: 650V Load current: 8A Max. forward impulse current: 0.48kA Case: ITO220AC Kind of package: tube Max. forward voltage: 1.8V Power dissipation: 78.1W Technology: SiC Max. load current: 28A Semiconductor structure: single diode Leakage current: 60µA Type of diode: Schottky rectifying Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PCDF0865G1_T0_00601 |
|
Hersteller: Panjit
SiC Schottky Diodes 650V/8A Through Hole Silicon Carbide Schottky Barrier Diode
SiC Schottky Diodes 650V/8A Through Hole Silicon Carbide Schottky Barrier Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PCDF0865G1_T0_00601 |
|
Hersteller: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Max. off-state voltage: 650V
Load current: 8A
Max. forward impulse current: 0.48kA
Case: ITO220AC
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 78.1W
Technology: SiC
Max. load current: 28A
Semiconductor structure: single diode
Leakage current: 60µA
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Max. off-state voltage: 650V
Load current: 8A
Max. forward impulse current: 0.48kA
Case: ITO220AC
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 78.1W
Technology: SiC
Max. load current: 28A
Semiconductor structure: single diode
Leakage current: 60µA
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH