PCDH2065CCGB_T0_00601 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: DIODE ARR SIC 650V 10A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.22 EUR |
| 30+ | 7.56 EUR |
| 60+ | 6.89 EUR |
| 120+ | 6.32 EUR |
| 510+ | 6.08 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details PCDH2065CCGB_T0_00601 Panjit International Inc.
Description: DIODE ARR SIC 650V 10A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-247AD, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote PCDH2065CCGB_T0_00601
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PCDH2065CCGB_T0_00601 | Panjit |
SiC Schottky Diodes 650V SiC Schottky Barrier Diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PCDH2065CCGB_T0_00601 | PanJit |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Mounting: THT Max. off-state voltage: 650V Max. forward impulse current: 704A Max. forward voltage: 1.4V Power dissipation: 138W Technology: SiC Load current: 10A x2 Max. load current: 48A Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 0.1mA Case: TO247-3 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PCDH2065CCGB_T0_00601 |
|
Hersteller: Panjit
SiC Schottky Diodes 650V SiC Schottky Barrier Diode
SiC Schottky Diodes 650V SiC Schottky Barrier Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PCDH2065CCGB_T0_00601 |
|
Hersteller: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 704A
Max. forward voltage: 1.4V
Power dissipation: 138W
Technology: SiC
Load current: 10A x2
Max. load current: 48A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: TO247-3
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 704A
Max. forward voltage: 1.4V
Power dissipation: 138W
Technology: SiC
Load current: 10A x2
Max. load current: 48A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: TO247-3
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH