PCDP0665GB_T0_00601 Panjit
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.96 EUR |
| 10+ | 6.7 EUR |
| 100+ | 5.4 EUR |
| 250+ | 5.11 EUR |
| 500+ | 4.8 EUR |
| 1000+ | 4.11 EUR |
| 2500+ | 3.88 EUR |
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Technische Details PCDP0665GB_T0_00601 Panjit
Description: DIODE SIL CARB 650V 6A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 271pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote PCDP0665GB_T0_00601 nach Preis ab 3.84 EUR bis 10.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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PCDP0665GB_T0_00601 | Panjit International Inc. |
 Description: DIODE SIL CARB 650V 6A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 271pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCDP0665GB_T0_00601 |
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Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 271pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 271pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.36 EUR |
| 50+ | 5.4 EUR |
| 100+ | 4.93 EUR |
| 500+ | 4.08 EUR |
| 1000+ | 3.84 EUR |